Stress measurements on TSVs and BEoL structures with high spatial resolution

Author

Vogel, Dietmar ; Auerswald, Ellen ; Auersperg, Juergen ; Rzepka, Sven

Author_Institution

Micro Mater. Center, Fraunhofer ENAS, Chemnitz, Germany

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

Knowledge and control of local stress development in BEoL stacks and nearby TSVs in advanced 3D integrated devices is a key to their thermo-mechanical reliability. The paper presents a combined simulation / measurement approach to evaluate stresses generated in the result of the TSV and BEoL stack manufacturing and 3D bonding processes. Stress measurement methods of high spatial resolution capability are briefly benchmarked. The application of microRaman and the new FIB based stress release techniques on TSV structures are demonstrated in some detail.

Keywords

bonding processes; focused ion beam technology; integrated circuit reliability; stress measurement; three-dimensional integrated circuits; 3D bonding process; 3D integrated devices; BEoL stacks; BEoL structures; FIB based stress release; TSV structures; high spatial resolution; local stress development; microRaman application; stack manufacturing; stress measurements; thermomechanical reliability; Analytical models; Lattices; Silicon; Spatial resolution; Stress; Stress measurement; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153465

Filename

7153465