Intrinsic point defect behavior close to silicon melt/solid interface

The impact of various crystal pulling process and silicon material parameters on the so called Voronkov criterion for “perfect” crystal pulling is revised. It is shown that thermal stress effects should be taken into account in particular for the development of the 450 mm diameter single crystal silicon pulling technology. An improved Voronkov criterion is proposed and its application illustrated showing that all published experimental results on grown-in defects dependence on doping and crystal pulling conditions can be explained at least semi-quantitatively.