• DocumentCode
    720864
  • Title

    Iron contamination and reusability of seed crystal for quasi-single crystalline silicon ingots for solar cells

  • Author

    Zaoyang Li ; Lijun Liu ; Xiaofang Qi ; Genxiang Zhong ; Genshu Zhou

  • Author_Institution
    Sch. of Energy & Power Eng., Xi´an Jiaotong Univ., Xi´an, China
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The seed crystal is easily contaminated by iron impurity during the directional solidification (DS) process for manufacturing quasi-single crystalline (QSC) silicon ingot, and thus influences its reusability. We investigate the transport and distribution characteristics of iron impurity in DS processes based on different seed preservation time, and reveal the iron contamination level in seed crystal. Additionally, the heights of the bottom iron contaminated region are compared for silicon ingots grown from normal and recycled seed crystals to find out the reusability of the recycled seed crystal. The results show that the total iron concentration in the seed crystal after full solidification is between 1014 and 1015 atoms/cm3. The recycled seed crystal can be reused for DS processes with long preservation, whereas it is not recommended for reusing for processes with short preservation.
  • Keywords
    crystallisation; impurities; ingots; optoelectronic devices; semiconductor device manufacture; solar cells; solidification; DS process; directional solidification process; distribution characteristics; full solidification; iron impurity contamination; quasi-single crystalline silicon ingot manufacturing; recycled seed crystal reusability; seed preservation time; solar cells; total iron concentration; transport characteristics; Contamination; Crystals; Impurities; Iron; Photovoltaic cells; Silicon; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153492
  • Filename
    7153492