Non-equilibrium charge transport through quantum dot in magnetic field

Author

Koti, Mahesh ; Khoir, Vinaydatt V.

Author_Institution

Dept. of Electron. & Commun. Eng., PES Coll. of Eng., Mandya, India

fYear

2015

fDate

12-13 June 2015

Firstpage

20

Lastpage

23

Abstract

Magnetic field effects the charge transport in quantum dot. The grain(quantum dot) I-V characteristics are subject to change due to magnetic field, extent of variation in the Quantum Dot I-V characteristics is function of magnetic field strength, size and type of the Quantum Dot. We present the study of the I-V characteristics of the grain in non-equilibrium and steady state conditions in a magnetic field. We use non-equilibrium green function based technique for the computations.

Keywords

Green´s function methods; magnetic field effects; semiconductor quantum dots; I-V characteristic; magnetic field effect; nonequilibrium charge transport; nonequilibrium green function; quantum dot; steady state condition; Electric potential; Energy states; Magnetic tunneling; Mathematical model; Quantum computing; Quantum dots; Saturation magnetization; Bohrmagnetron; Green Function; Kondo effect; Landé g-factor; Nanoelectronics; Quantum Dot;

fLanguage

English

Publisher

ieee

Conference_Titel

Advance Computing Conference (IACC), 2015 IEEE International

Conference_Location

Banglore

Print_ISBN

978-1-4799-8046-8

Type

conf

DOI

10.1109/IADCC.2015.7154677

Filename

7154677