• DocumentCode
    721420
  • Title

    Laser powered magnetic-random access memory

  • Author

    Xu, Y. ; Lin, W. ; Hehn, M. ; Lu, Y. ; Rinnert, H. ; Petit, S. ; Montaigne, F. ; Chaput, L. ; Negulescu, B. ; Andrieu, S. ; Mangin, S.

  • Author_Institution
    Inst. Jean Lamour, Vandoeuvre les Nancy, France
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    This study demonstrates the use of a light source to power a magnetic tunnel junction used in magnetic random access memory. The magnetic tunnel junction grown on silicon substrate is composed of Ta-Co-IrMn-Co-Al2O3-Co-Pt and activated using 800 nm laser wavelength.
  • Keywords
    MRAM devices; alumina; cobalt; iridium alloys; magnetic tunnelling; manganese alloys; platinum; tantalum; Si; Ta-Co-IrMn-Co-Al2O3-Co-Pt; laser powered magnetic-random access memory; light source; magnetic tunnel junction; silicon substrate; wavelength 800 nm; Junctions; Magnetic recording; Magnetic tunneling; Power lasers; Semiconductor lasers; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7156501
  • Filename
    7156501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=721420