• DocumentCode
    721665
  • Title

    Magnetocapacitive response in organic spin valve with a 3,4,9,10-perylene-teracarboxylic-dianhydride spacer

  • Author

    Hong, J. ; Chen, S. ; Chiang, W. ; Lin, M.

  • Author_Institution
    Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. The frequency-dependent impedance characterization has been carried out in ferromagnet (FM)/ organic semiconductor (OSC)/FM tri-layered organic spin valves (OSVs) over the frequency range of 10 Hz-1 MHz with the objective of studying interfacial properties between ferromagnetic materials and organic semiconductors. The magnetoresistance and magnetocapacitance effects is investigated by fitting the field-dependent impedance spectra with an equivalent resistor-capacitor (RC) parallel network model. The analysis validates the RC parallel network model for OSVs and the extracted field dependent resistive parameters agree with the experimental values, indicating an effective magneto-transport characteristic in OSVs dominated by the charge accumulation at the organic-ferromagnet interfaces.
  • Keywords
    capacitance; interface magnetism; magnetoresistance; organic semiconductors; spin valves; 3,4,9,10-perylene-teracarboxylic-dianhydride spacer; charge accumulation; effective magnetotransport characteristic; equivalent resistor-capacitor parallel network model; ferromagnet-organic semiconductor-ferromagnet trilayered organic spin valves; field dependent resistive parameters; field-dependent impedance spectra; frequency-dependent impedance characterization; interfacial properties; magnetocapacitance effectis; magnetoresistance effect; organic-ferromagnet interfaces; Frequency modulation; Impedance; Magnetic resonance imaging; Magnetic semiconductors; Organic semiconductors; Physics; Spin valves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7156855
  • Filename
    7156855