Title :
Magnetoresistance of cylindrical nanowires with artificial pinning site
Author :
Vidal, E. Vilanova ; Mohammed, H. ; Ivanov, I. ; Kosel, J.
Author_Institution :
King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
Abstract :
New concepts of magnetic memory devices are exploiting the movement of data bits by current induced domain wall motion. This concept has been widely explored with rectangular nanowires (NWs) or stripes both theoretically and experimentally [1]. In the case of cylindrical NWs not much progress has been made on the experimental side, despite its promising advantages like the absence of Walker breakdown [2].
Keywords :
magnetic domain walls; magnetoresistance; nanowires; artificial pinning site; current induced domain wall motion; cylindrical nanowires; data bits; magnetic memory devices; magnetoresistance; rectangular nanowires; Magnetic domain walls; Magnetic field measurement; Magnetization; Magnetoresistance; Nanowires; Nickel; Switches;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157068
