DocumentCode
721823
Title
Magnetoresistance of cylindrical nanowires with artificial pinning site
Author
Vidal, E. Vilanova ; Mohammed, H. ; Ivanov, I. ; Kosel, J.
Author_Institution
King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
New concepts of magnetic memory devices are exploiting the movement of data bits by current induced domain wall motion. This concept has been widely explored with rectangular nanowires (NWs) or stripes both theoretically and experimentally [1]. In the case of cylindrical NWs not much progress has been made on the experimental side, despite its promising advantages like the absence of Walker breakdown [2].
Keywords
magnetic domain walls; magnetoresistance; nanowires; artificial pinning site; current induced domain wall motion; cylindrical nanowires; data bits; magnetic memory devices; magnetoresistance; rectangular nanowires; Magnetic domain walls; Magnetic field measurement; Magnetization; Magnetoresistance; Nanowires; Nickel; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7157068
Filename
7157068
Link To Document