DocumentCode
721840
Title
Effects of geometry on skyrmion pinning and operation symmetry
Author
Ian, C. Ang Ching ; Fook, H. ; Gan, W. ; Purnama, I. ; Lew, W.
Author_Institution
Nanyang Technol. Univ., Singapore, Singapore
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
Magnetic skyrmions are stable spin configurations which originate from chiral interactions. Their topologically protected nature confers upon them a high stability while still retaining their very small size. These highly desirable characteristics have attracted significant scientific interest in the creation of a skyrmion-based memory device. However, skyrmions are also highly resistant to the conventional pinning used in domain-wall memory devices [1] as they are known to skirt around the pinning sites in the magnetic film that they reside on. This poses a significant problem as the skyrmion´s position becomes less predictable [2]. Furthermore, the movement of particle-like magnetic skyrmions have an additional degree of freedom on a nanowire that has yet to be investigated in detail.
Keywords
geometry; magnetic devices; magnetic thin films; micromagnetics; nanowires; skyrmions; thin film devices; Co-Pt; chiral interactions; conventional pinning; degree of freedom; domain-wall memory devices; geometry effects; magnetic film; magnetic skyrmion pinning; nanowire; operation symmetry; particle-like magnetic skyrmions; skyrmion-based memory device; spin configurations; topologically protected nature; Force; Gallium nitride; Geometry; Magnetic domains; Solid modeling; Three-dimensional displays; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7157087
Filename
7157087
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