• DocumentCode
    721907
  • Title

    Voltage-induced reversible and irreversible changes in the magnetic coercivity of Fe, Co/ZnO heterostructures

  • Author

    Chang, P. ; Hsu, C. ; Lin, W.

  • Author_Institution
    Dept. of Phys., Nat. Taiwan Normal Univ., Taipei, Taiwan
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    This study investigates the magnetic coercivity of heterostructures composed of a transition metal (Fe and Co) and a semiconductor (ZnO). An enhancement in the magnetic coercivity is observed which is due to direct current heating-induced oxidation at the interface. Depth-profiling X-ray photoemission spectroscopy observations confirm oxide formation at the interface due to annealing. It is shown that magnetic coercivity of heterostructures monotonically decreased as a relatively small voltage is applied and its reversibility is demonstrated by cyclically changing the bias voltage.
  • Keywords
    II-VI semiconductors; X-ray photoelectron spectra; annealing; cobalt; coercive force; interface magnetism; iron; oxidation; semiconductor-metal boundaries; wide band gap semiconductors; zinc compounds; Co-ZnO; Fe-ZnO; annealing; bias voltage; current heating-induced oxidation; depth-profiling X-ray photoemission spectroscopy; magnetic coercivity; oxide formation; transition metal-semiconductor heterostructures; Coercive force; II-VI semiconductor materials; Iron; Magnetic hysteresis; Magnetic semiconductors; Magnetic tunneling; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7157165
  • Filename
    7157165