DocumentCode
721917
Title
Spin hall magnetoresistance in CoFe2 O4 /Pt films
Author
Wu, H. ; Zhang, Q. ; Wan, C. ; Ali, S. ; You, L. ; Wang, J. ; Choi, Y. ; Han, X.
Author_Institution
State Key Lab. of Magn., Inst. of Phys., Beijing, China
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
This study aims to measure the spin Hall magnetoresistance combined with ordinary magnetoresistance of CoFe2O4/Pt films at room temperature. The CoFe2O4 thin film is produced by pulsed laser deposition and magnetron sputtering on MgO(001) substrate. X-ray absorption spectra and magnetic circular dichroism are used for characterization. Cross-section TEM confirmed that the CoFe2O4 film crystal epitaxially grew along the (001) direction, and field dependence of magnetization and transport measurement confirmed its ferrimagnetism and insulation. Results demonstrate the universality of spin Hall magnetoresistance effect and the utility in spintronics of CoFe2O4 as a new type of magnetic insulator.
Keywords
X-ray absorption spectra; cobalt compounds; ferrimagnetic materials; insulating thin films; interface magnetism; magnetic circular dichroism; magnetic thin films; magnetisation; magnetoelectronics; magnetoresistance; metal-insulator boundaries; platinum; pulsed laser deposition; spin Hall effect; sputter deposition; transmission electron microscopy; CoFe2O4-Pt; MgO; X-ray absorption spectra; cross-section TEM; ferrimagnetism; magnetic circular dichroism; magnetic insulator; magnetization; magnetron sputtering; pulsed laser deposition; spin Hall magnetoresistance; spintronics; temperature 293 K to 298 K; thin film; transport measurement; Films; Hall effect; Magnetic hysteresis; Magnetization; Magnetoresistance; Perpendicular magnetic anisotropy;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7157176
Filename
7157176
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