Giant spontaneous hall effect in zero-moment Mn2RuxGa

Here the authors report on the temperature, Ru concentration and substrate-induced strain dependence of the transport properties of MRG at or near the compensation point . Two sets of samples by co-sputtering from and Mn₂Ga and Ru targets: (i) where the Ru concentration is constant at x ~ 1 and the strain (Δc/a) is varied from 1 .8% to 3 .6% and (ii) where the strain is constant at ~1 .9% and x is varied from 0 .62 to 1.1. The spontaneous Hall effect (SHE) of the samples are measured in a physical properties measurement system, with a maximum applied field of 12 T and a temperature range of 400 K to 10 K . We show that there is a temperature Tcomp, in most of the samples, depending both on x, and (Δc/a) where the overall magnetization is perfectly compensated.