Title :
Half-metallic electronic structure of Co2(Mn, Fe)Si electrodes investigated through tunneling spectroscopy for fully epitaxial magnetic tunnel junctions
Author :
Moges, K. ; Liu, H. ; Kawami, T. ; Uemura, T. ; Yamamoto, M.
Author_Institution :
Div. of Electron. for Inf., Hokkaido Univ., Sapporo, Japan
Abstract :
Our purpose in the present study was to elucidate the origin of the giant TMR ratio of Co2(Mn,Fe)Si (CMFS) MTJs with lightly Fe-doped, Mn-rich CMFS electrodes. We took into consideration the valence electron number/f.u., Zt, of off-stoichiometric Co2MnSi (CMS) expressed as Co2MnαSiß decreases with increasing α from an Mn-deficient composition to an Mn-rich composition according to the antisite-based formula composition model [5]. The EF position would generally shift to the lower energy side in the half-metal gap with increasing α and finally cross the minority-spin valence band edge . On the other hand, the Zt value is increased by substituting Fe for Mn in CMS. First-principles calculations of Co2(Mn1-xFex)Si predicted that the EF position in the half-metal gap of these materials generally would shift to the higher energy side with an increase in x [6,7].
Keywords :
ab initio calculations; antisite defects; cobalt alloys; electrodes; energy gap; iron alloys; magnetic epitaxial layers; manganese alloys; silicon alloys; tunnelling magnetoresistance; valence bands; Co2(MnFe)Si; antisite-based formula composition model; electrodes; first-principles calculations; fully epitaxial magnetic tunnel junctions; giant TMR ratio; half-metal gap; half-metallic electronic structure; minority-spin valence band edge; off-stoichiometric Heusler alloy; tunneling spectroscopy; valence electron number; Electrodes; Iron; Magnetic tunneling; Manganese; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157432