Electrical manipulation of magnetization switching in Co2FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization

Author

Wen, Z. ; Sukegawa, H. ; Kasai, S. ; Inomata, K. ; Mitani, S.

Author_Institution

Nat. Inst. for Mater. Sci. (NIMS), Tsukuba, Japan

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its applications in low-power-consumption spintronic devices, such as magnetoresistive random access memories (MRAMs) and non-volatile magnetic-logic circuits. Recent investigations of electrical manipulation of magnetization switching in magnetic tunnel junctions (MTJs) have mainly been carried out in CoFeB/MgO/CoFeB structures. However, the switching current density of those MTJs is still too high for the scaling of gigabit MRAMs. Therefore, the establishment of new ferromagnetic materials for MTJs is greatly desired.

Keywords

MRAM devices; aluminium alloys; cobalt alloys; iron alloys; magnetic logic; magnetic tunnelling; magnetisation reversal; Co₂FeAl; MRAMs; STT switching; electric field assistant magnetization switching; electrical manipulation; magnetic tunnel junction; magnetoresistive random access memories; nonvolatile magnetic logic circuits; perpendicular magnetization; spin orbit torque switching; spin transfer torque; spintronic devices; Epitaxial growth; Magnetic tunneling; Magnetization; Magnetomechanical effects; Switches; Switching circuits; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157500

Filename

7157500