Possible explanation for observed effectiveness of voltage controlled anisotropy

Author

Ahmed, R. ; Victora, R.H.

Author_Institution

Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

This article presents calculation of magnetic anisotropy using the LKKR method employing the local spin density approximation. Micromagnetic simulation is used to calculate magnetization switching in the CoFeB-MgO interface. Experimental measurements rely on the large demagnetization energy nearly cancelling the interfacial anisotropy locally, thus over emphasizing the small effect of the voltage and leading to domain wall motion during the switching process.

Keywords

boron alloys; cobalt alloys; demagnetisation; density functional theory; interface magnetism; iron alloys; magnesium compounds; magnetic anisotropy; magnetic domain walls; magnetic switching; micromagnetics; CoFeB-MgO; LKKR method; demagnetization energy; domain wall motion; interfacial anisotropy; local spin density approximation; magnetic anisotropy; magnetization switching; micromagnetic simulation; voltage-controlled anisotropy; Anisotropic magnetoresistance; Approximation methods; Current density; Films; Magnetization; Switches; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157501

Filename

7157501