DocumentCode :
722170
Title :
High TMR ratio in perpendicular MTJs using fe-based Heusler alloy Fe2Cr1−xCoxSi
Author :
Wang, Y. ; Qiu, J. ; Ji, R. ; Lim, S. ; Han, G. ; Teo, K.
Author_Institution :
Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
Perpendicular magnetic tunnel junctions (p-MTJs) have attract immense attention due to high thermal stability and low critical current for spin-transfer torque induced magnetization switching, as compared to in-plane MTJs. The conventional perpendicular magnetic anisotropy (PMA) materials explored so far include rare-earth/transition metal alloys, Co/(Pd, Pt, Ni) multilayers, and L10-or-dered (Co, Fe)Pt alloys. However, these materials suffer from some limitations including insufficient chemical and/or thermal stability and low spin polarization. Further, the interfacial PMA induced by MgO interface was shown as an efficient way to realize PMA for conventional magnetic storage materials, such as CoFeB. Nonethelss, the damping constant of CoFeB increases sharply as its thickness decreases (less than 2 nm) and leads to an increase in the intrinsic critical switching current density. Recently, full Heusler alloys have attracted much attention as PMA materials due to high spin polarization, low damping constant and good lattice match with MgO, such as Co2FeAl and Co2FeAl0.5Si0.5. So far, only Co2FeAl in Heusler alloys has been demonstrated with a TMR ratio of 91% in p-MTJs [1] and there is no report on the PMA in Fe-based Heusler alloys such as Fe2Cr1-xCoxSi (FCCS).
Keywords :
chromium alloys; cobalt alloys; critical currents; current density; iron alloys; magnetic tunnelling; magnetisation reversal; perpendicular magnetic anisotropy; silicon alloys; thermal stability; Fe2Cr1-xCoxSi; Heusler alloy; TMR ratio; critical current; current density; damping constant; perpendicular MTJ; perpendicular magnetic tunnel junctions; spin polarization; spin-transfer torque induced magnetization switching; thermal stability; FCC; Films; Magnetic tunneling; Metals; Switches; Thermal stability; Tunneling magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7157503
Filename :
7157503
Link To Document :
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