• DocumentCode
    722171
  • Title

    Dependence of spin-dependent transport signals on measurement frequency in CoFe/MgO/ n+-Si junctions

  • Author

    Inokuchi, T. ; Ishikawa, M. ; Sugiyama, H. ; Saito, Y.

  • Author_Institution
    Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    This study aims to investigate the relationship between localized states and spin-dependent transport properties by means of dependence of the differential conductance and inelastic electron tunnelling signals on the measurement frequency. It is shown that the differential conductance decreases with increase in the measurement frequency. The results indicate that the extrinsic spin dependent signals, originates from localized states/interface traps, can be separated by measuring dependence of differential conductance on the measurement frequency.
  • Keywords
    MIS structures; cobalt alloys; electrical conductivity; elemental semiconductors; interface states; iron alloys; localised states; magnesium compounds; silicon; spin polarised transport; tunnelling; CoFe-MgO-Si; differential conductance; inelastic electron tunnelling; interface traps; localized states; measurement frequency; spin-dependent transport; Amplifiers; Electrodes; Frequency measurement; Gold; Junctions; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7157504
  • Filename
    7157504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=722171