Influence of Ta buffer layer thickness on magnetic properties and microstructure parameters of CoFeB and MgO layers

Author

Kanak, J. ; Wrona, J. ; Banasik, M. ; Zywczak, A. ; Powroznik, W. ; Czapkiewicz, M. ; Stobiecki, T.

Author_Institution

Dept. of Electron., AGH Univ. of Sci. & Technol., Krakow, Poland

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

This study discusses the influence of Ta buffer layer thickness on magnetic and structural parameters of a Ta-Co₄₀Fe₄₀B₂₀-MgO-Ta magnetic tunnel junction (MTJ). The MTJ is deposited on thermally oxidized Si(001) substrates and annealed at 330°C for 20 min. Atomic force microscopy and X-ray diffraction are used to investigate the microstructure and surface roughness while vibrating sample magnetometry is employed to determine the magnetic moment, perpendicular magnetic anisotropy, and coercivity.

Keywords

X-ray diffraction; annealing; atomic force microscopy; boron alloys; buffer layers; cobalt alloys; coercive force; crystal microstructure; interface structure; iron alloys; magnesium compounds; magnetic moments; magnetic multilayers; magnetometry; perpendicular magnetic anisotropy; surface roughness; tantalum; MTJ; Si; Ta-Co₄₀Fe₄₀B₂₀-MgO-Ta; X-ray diffraction; annealing; atomic force microscopy; buffer layer thickness; coercivity; magnetic moment; magnetic properties; magnetic tunnel junction; microstructure; perpendicular magnetic anisotropy; surface roughness; temperature 330 degC; thermally oxidized substrates; time 20 min; vibrating sample magnetometry; Amorphous magnetic materials; Annealing; Magnetic multilayers; Magnetic tunneling; Magnetometers; Perpendicular magnetic anisotropy;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157508

Filename

7157508