DocumentCode
722218
Title
Nonlinear effect on diode-assisted magnetoresistance in semiconductors
Author
Luo, Z. ; Zhang, X. ; Xiong, C. ; Chen, J.
Author_Institution
Sch. of Mater. Sci. & Eng., Tsinghua Univ., Beijing, China
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
In diode-assisted MR, large MR appears in the resistance transition region and its value is related to the transition resistance difference . The diode, as a nonlinear electric component, causes this resistance transition and plays an important role in the MR performance . Here, we systemically study the nonlinear effect of diode on the diode-assisted MR . This work would help to understand the nonlinear effect on MR and offer the guidance to design new MR device with larger MR value and higher low magnetic field sensitivity .
Keywords
magnetoresistance; magnetoresistive devices; semiconductor diodes; diode-assisted magnetoresistance; magnetic field sensitivity; magnetoresistance device; nonlinear effect; nonlinear electric component; resistance transition region; semiconductors; Electrodes; Magnetic fields; Magnetoresistance; Resistance; Resistors; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7157559
Filename
7157559
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