Title :
Metastable magnetic domain in bifurcated nanowire network probed by domain wall magnetoresistance
Author :
Kwon, J. ; Kerk, I. ; Lim, G. ; Murapaka, C. ; Goolaup, S. ; Chang, C. ; Lew, W.
Author_Institution :
Div. of Phys. & Appl. Phys., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We investigate the nanowire network with one input and two outputs for the magneto-resistive signal processing by angle dependent field. The effect of topological defect in the bifurcated nanowire and the angle dependent field leads to a pinned domain wall (DW) and subsequently the local magnetic domain reversal at the junction of triple nanowire network. A transverse DW propagates in a selected part of branch in a network with an alternating magnetic field. The asymmetric MR curve demonstrates how the magnetization configuration affects to the change of resistance due to the interplay between the local magnetization and the propagation of DW at the selected nanowire. The MR measurement reveals that the bifurcated branch is able to obtain the distinct signals via the bifurcated current paths in the magnetic nanowire network. In the experiment, the resistance-sensitive signals related to local magnetization reversal and DW were collected at a low field. The low external field induces the deformation of domain magnetization configuration and DW in the bifurcated branches in nanowire network without any injected DW through a selected input nanowire branch. Then, the MR curve obtained from the nanowire network was compared with micromagnetic simulation configurations.
Keywords :
bifurcation; magnetic domain walls; magnetisation reversal; magnetoresistance; nanomagnetics; nanowires; alternating magnetic field; angle dependent field; asymmetric magnetoresistive curve; bifurcated current paths; bifurcated nanowire network; domain magnetization configuration deformation; domain wall magnetoresistance; domain wall propagation; external field; input nanowire branch; local magnetic domain reversal; local magnetization reversal; magnetic nanowire network; magnetoresistive signal processing; metastable magnetic domain; micromagnetic simulation configurations; pinned domain wall; resistance-sensitive signals; topological defect effect; transverse domain wall; triple nanowire network junction; Current measurement; Magnetic domains; Magnetic field measurement; Magnetic tunneling; Magnetization; Magnetoresistance;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157628