DocumentCode
722274
Title
Perpendicular magnetic anisotropy in Ta/Pd (0–10 nm)/Co2 FeAl0.5 Si0.5 /MgO/Ta structured films
Author
Fu, H. ; You, C. ; Zhang, X. ; Tian, N.
Author_Institution
Sch. of Mater. Sci. Eng., Xi´an Univ. of Technol., Xian, China
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
In this work, the film stacks of Ta (8 nm)/Pd (t=0-10 nm)/Co2FeAl0.5Si0.5 (3.2 nm)/MgO (2 nm)/Ta (6 nm) (hereinafter refer to Ta/Pd (t)/CFAS/MgO/Ta) were fabricated on the Si substrate by magnetron sputtering system under a base pressure better than 3×10-5 Pa at room temperature. The influence of the thickness of inserting Pd layer on the PMA was investigated in detail.
Keywords
aluminium alloys; cobalt alloys; iron alloys; magnesium compounds; magnetic multilayers; magnetic thin films; palladium; perpendicular magnetic anisotropy; silicon alloys; sputter deposition; tantalum; Pd layer thickness; Si; Si substrate; Ta-Pd-Co2FeAl0.5Si0.5-MgO-Ta; film stacks; magnetron sputtering system; perpendicular magnetic anisotropy; size 0 nm to 10 nm; temperature 293 K to 298 K; Annealing; Critical current density (superconductivity); Films; Perpendicular magnetic anisotropy; Saturation magnetization; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7157632
Filename
7157632
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