Title :
Unipolar switching of perpendicular mtj for STT-MRAM application
Author :
Zhou, Y. ; Wang, Z. ; Hao, X. ; Huai, Y. ; Zhang, J. ; Jung, D. ; Satoh, K.
Author_Institution :
Avalanche Technol., Fremont, CA, USA
Abstract :
In this paper, new pMTJ that shows reliable unipolar switching, since the free layer has strong perpendicular anisotropy and well oriented perpendicular magnetization, same as in a typical pMTJ designed for STT-MRAM application, unipolar switching of pMTJ in a 1D-1MTJ architecture MRAM may be achieved for application in extreme densities . In this presentation, we will demonstrate the unipolar switching from these pMTJ devices and present our study of the physics process behind such intriguing behavior .
Keywords :
MRAM devices; magnetic switching; magnetic tunnelling; magnetoelectronics; perpendicular magnetic anisotropy; torque; 1D-1MTJ architecture MRAM; STT-MRAM application; free layer; perpendicular MTJ; perpendicular anisotropy; perpendicular magnetization; physics process; reliable unipolar switching; Computer architecture; Electric fields; Magnetization; Switches; Thermal stability; Torque; Transistors;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157689
