Magnetic properties and magnetization dynamics of magnetic tunnel junctions bottom electrode with different buffer layers

Author

Wrona, J. ; Kanak, J. ; Banasik, M.J. ; Zietek, S. ; Skowronski, W. ; Stobiecki, T.

Author_Institution

Singulus Technol. AG, Kahl am Main, Germany

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

Intensified work on Magnetic Tunnel Junctions (MTJs) allowed creating non-volatile Magnetic Random Access Memory (MRAM) which further enhances research on MTJs to achieve high performance of non-volatile devices [1]. The magnetic properties of CoFeB layers strongly depend on the choice of the buffer layers in a buffer/CoFeB/MgO/capping structure and its appropriate selection can provide more effective magnetic parameters [2, 3].

Keywords

MRAM devices; buffer layers; cobalt compounds; iron compounds; magnesium compounds; magnetic thin films; magnetic tunnelling; CoFeB-MgO; MRAM; buffer layers; buffer-CoFeB-MgO-capping structure; magnetic parameters; magnetic properties; magnetic tunnel junction bottom electrode; magnetization dynamics; nonvolatile magnetic random access memory; Anisotropic magnetoresistance; Buffer layers; Magnetic hysteresis; Magnetic tunneling; Magnetization; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157690

Filename

7157690