Title :
Transition metal-doped ZnO diluted magnetic semiconductors tuned by high pulsed magnetic field
Author :
Zhong, M. ; Wang, S. ; Li, Y. ; Li, W. ; Hu, Y. ; Zhu, M. ; Jin, H.
Author_Institution :
Lab. for Microstructures/Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China
Abstract :
Transition metal doped ZnO diluted magnetic semiconductors were synthesized by hydrothermal method under high magnetic field. Transition metal ions were incorporated into hexagonal wurtzite structural ZnO without secondary phases observed. High magnetic field can slightly improve real doped concentration and tune the magnetic property of TM-doped ZnO by controlling the type of dominant point defect.
Keywords :
II-VI semiconductors; chromium; magnetic field effects; manganese; nickel; point defects; semiconductor doping; semimagnetic semiconductors; wide band gap semiconductors; zinc compounds; ZnO:Cr,Mn; ZnO:Cr,Ni; hexagonal wurtzite structural ZnO; high pulsed magnetic field; hydrothermal method; magnetic property; point defect; real doped concentration; transition metal ions; transition metal-doped ZnO diluted magnetic semiconductors; II-VI semiconductor materials; Ions; Magnetic fields; Magnetic properties; Magnetic semiconductors; Zinc oxide;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157746
