Title :
Efficient dual spin-valley filter in strained silicene
Author :
Yesilyurt, I.C. ; Liang, G. ; Jalil, M.B.
Author_Institution :
Electr. & Comput. Enginnering, Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
A two-barrier device is proposed in this work which can create valley-spin polarization and filtering function in strain engineered silicene. The device consists of two parts: 1) a region of uniaxial strain and exchange field arising from the adjacent top and bottom magnetic insulators, and 2) a region with magnetic field arising from two ferromagnetic stripes, and an electrochemical potential generated by top and bottom gates.
Keywords :
elemental semiconductors; exchange interactions (electron); ferromagnetic materials; filters; magnetoelectronics; silicon; Si; dual spin-valley filter; electrochemical potential; exchange field; ferromagnetic stripes; filtering function; magnetic field; magnetic insulators; strain engineered silicene; two-barrier device; uniaxial strain; valley-spin polarization; Electric potential; Graphene; Logic gates; Magnetic confinement; Magnetic field induced strain; Magnetic separation; Strain;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157756
