• DocumentCode
    722493
  • Title

    Modular scalable medium-voltage impedance measurement unit using 10 kV SiC MOSFET PEBBs

  • Author

    Cvetkovic, Igor ; Shen, Zhiyu ; Jaksic, Marko ; DiMarino, Christina ; Fang Chen ; Boroyevich, Dushan ; Burgos, Rolando

  • Author_Institution
    Center for Power Electron. Syst. (CPES), Virginia Tech, Blacksburg, VA, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    326
  • Lastpage
    331
  • Abstract
    This paper describes the design and implementation of the first functional medium-voltage impedance measurement unit capable of characterizing in-situ source and load impedances of dc- and ac-networks (4160 V ac, 6000 V dc, 300 A, 2.2 MVA) in the frequency range from 0.1 Hz-1 kHz. It comprises three power electronics building blocks, each built using SiC MOSFET H-bridges, features great reconfigurability, and allows both series and shunt perturbation injection in order to achieve accurate impedance characterization of the Navy´s shipboard power systems. With extraordinary advantages featured by the power electronics building block modular concept, and unconventional power processing benefits offered by SiC semiconductors, development of the unit shown in this paper unquestionably enables both, improvement of the existing, and design of the future, stable and reliable electrical Navy shipboard platforms with advanced electrical energy generation and modern distribution architecture.
  • Keywords
    MOSFET; bridge circuits; electric impedance measurement; marine power systems; power distribution reliability; ships; AC network; DC network; MOSFET H-bridges; MOSFET PEBB; Navy shipboard power system; SiC; advanced electrical energy; frequency 0.1 Hz to 1 kHz; in-situ source; load impedance; modern distribution architecture; modular scalable medium voltage impedance measurement unit; series perturbation injection; shunt perturbation injection; unconventional power processing; voltage 10 kV; Impedance; Impedance measurement; Power electronics; Power system stability; Silicon carbide; Stability criteria; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electric Ship Technologies Symposium (ESTS), 2015 IEEE
  • Conference_Location
    Alexandria, VA
  • Print_ISBN
    978-1-4799-1856-0
  • Type

    conf

  • DOI
    10.1109/ESTS.2015.7157913
  • Filename
    7157913