Title :
Table of contents
Abstract :
The following topics are dealt with: light emitting diodes; microwave technology; MOSFET; tunneling FET; Fin-HEMT; solar cells; terahertz resonant tunneling diode; next generation wireless communication; RF magnetron sputtering; bipolar transistor; operational amplifier; CMOS power amplifier; LTE; thin film phototransistor; ultrasonic microsensor; MOS inverter; and resistive memory diode.
Keywords :
CMOS analogue integrated circuits; Long Term Evolution; MOSFET; bipolar transistors; high electron mobility transistors; light emitting diodes; logic gates; microsensors; microwave technology; next generation networks; operational amplifiers; phototransistors; power amplifiers; solar cells; sputter deposition; thin film transistors; tunnel transistors; ultrasonic transducers; CMOS power amplifier; Fin-HEMT; LTE; Long Term Evolution; MOS inverter; MOSFET; RF magnetron sputtering; bipolar transistor; light emitting diodes; microwave technology; next generation wireless communication; operational amplifier; resistive memory diode; solar cells; terahertz resonant tunneling diode; thin film phototransistor; tunneling FET; ultrasonic microsensor;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158486
