Title :
AlGaAs/InGaAs HEMTs passivated with atomic layer deposited SiO2 using aminosilane precursors
Author :
Suzuki, Takayuki ; Takigawa, Yosuke ; Iwata, Naotaka ; Dongyan Zhang ; Ohshita, Yoshio
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
Atomic layer deposited SiO2 has been applied to AlGaAs/InGaAs high electron mobility transistors (HEMTs) for surface passivation employing bis(ethylmethylamino)silane (BEMAS) and tris(dimethylamino)silane (3DMAS). The BEMAS SiO2 HEMT has achieved a lower on-resistance, as compared to the 3DMAS. This suggests excellent termination of surface dangling bonds by BEMAS.
Keywords :
III-V semiconductors; aluminium compounds; atomic layer deposition; gallium arsenide; high electron mobility transistors; indium compounds; passivation; silicon compounds; 3DMAS; AlGaAs-InGaAs; BEMAS; HEMT; SiO2; aminosilane precursors; atomic layer deposition; bis(ethylmethylamino)silane; high electron mobility transistors; surface dangling bonds; surface passivation; tris(dimethylamino)silane; Films; HEMTs; Indium gallium arsenide; Logic gates; MODFETs; Passivation; AlGaAs/InGaAs; SiO2; atomic layer deposition (ALD); bis(ethylmethylamino)silane (BEMAS); high electron mobility toransistor (HEMT); surface passivation;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158492
