AlGaAs/InGaAs HEMTs passivated with atomic layer deposited SiO2 using aminosilane precursors

Author

Suzuki, Takayuki ; Takigawa, Yosuke ; Iwata, Naotaka ; Dongyan Zhang ; Ohshita, Yoshio

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

26

Lastpage

27

Abstract

Atomic layer deposited SiO₂ has been applied to AlGaAs/InGaAs high electron mobility transistors (HEMTs) for surface passivation employing bis(ethylmethylamino)silane (BEMAS) and tris(dimethylamino)silane (3DMAS). The BEMAS SiO₂ HEMT has achieved a lower on-resistance, as compared to the 3DMAS. This suggests excellent termination of surface dangling bonds by BEMAS.

Keywords

III-V semiconductors; aluminium compounds; atomic layer deposition; gallium arsenide; high electron mobility transistors; indium compounds; passivation; silicon compounds; 3DMAS; AlGaAs-InGaAs; BEMAS; HEMT; SiO₂; aminosilane precursors; atomic layer deposition; bis(ethylmethylamino)silane; high electron mobility transistors; surface dangling bonds; surface passivation; tris(dimethylamino)silane; Films; HEMTs; Indium gallium arsenide; Logic gates; MODFETs; Passivation; AlGaAs/InGaAs; SiO2; atomic layer deposition (ALD); bis(ethylmethylamino)silane (BEMAS); high electron mobility toransistor (HEMT); surface passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158492

Filename

7158492