DocumentCode :
722796
Title :
Evaluation of band structure and conductive property of iron pyrite (FeS2) thin film deposited by spin-coating
Author :
Uchiyama, Shunsuke ; Ishikawa, Yasuaki ; Doe, Takahiro ; Uraoka, Yukiharu
Author_Institution :
Nara Inst. of Sci. & Technol., Ikoma, Japan
fYear :
2015
fDate :
4-5 June 2015
Firstpage :
28
Lastpage :
29
Abstract :
Iron pyrite, FeS2 is a semiconductor that has attention as next generation material for solar cells. We reported the evaluation of band structure and the conductivity of FeS2 thin film toward a realization of FeS2 heterojunction solar cells. FeS2 thin film was prepared by spin-coating. The pyridine solution which included Iron(III) acetylacetonate was utilized as a precursor ink and the precursor film was deposited on non-alkali glass by spin-coating. The deposited film were prebaked in air at 320°C for 15 min and annealed in sulfur gas for 60 min. The ionization potential, the Fermi level, and the bandgap were measured by PYS, valence band spectrum using XPS, and UV-Visible light transmission, respectively. In addition, the resistivity of the prepared thin film was also evaluated.
Keywords :
Fermi level; X-ray photoelectron spectra; electrical conductivity; electrical resistivity; energy gap; ionisation potential; iron compounds; semiconductor growth; semiconductor materials; semiconductor thin films; spin coating; ultraviolet spectra; valence bands; visible spectra; FeS2; Fermi level; PYS; UV-visible light transmission; XPS; annealing; band gap; band structure; conductive property; conductivity; heterojunction solar cells; ionization potential; iron pyrite thin film; iron(III) acetylacetonate; nonalkali glass; prebaking; precursor film; precursor ink; pyridine solution; resistivity; semiconductor; spin coating; sulfur gas; temperature 320 degC; time 15 min; time 60 min; valence band spectrum; Conductivity; Films; Iron; Photonic band gap; Photovoltaic cells; Semiconductor device measurement; Temperature measurement; Activation energy; Band gap; Conductivity; FeS2; Fermi level; Ionization potential;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
Type :
conf
DOI :
10.1109/IMFEDK.2015.7158533
Filename :
7158533
Link To Document :
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