Title :
Electrical properties of n+-Si/n-GaN junctions by room temperature bonding
Author :
Nishimura, T. ; Liang, J. ; Shigekawa, N. ; Watanabe, N.
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
The electrical properties of n+-Si/n-GaN junctions by room-temperature bonding were investigated. The n+-Si/n-GaN junctions exhibited linear current-voltage characteristics.
Keywords :
III-V semiconductors; bonding processes; elemental semiconductors; gallium compounds; semiconductor heterojunctions; silicon; wide band gap semiconductors; Si-GaN; electrical properties; linear current-voltage characteristics; n+-Si-n-GaN junctions; room temperature bonding; Annealing; Bonding; Gallium nitride; Resistance; Silicon; Temperature; Temperature measurement; GaN; Si; surface activated bonding;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158542
