Title :
Polarity dependent radiation hardness of GaN
Author :
Matsuo, Masayuki ; Murayama, Takayuki ; Koike, Kazuto ; Sasa, Shigehiko ; Yano, Mitsuaki ; Gonda, Shun-ichi ; Uedono, Akira ; Ishigami, Ryoya ; Kume, Kyo ; Ohtomo, Tomomi ; Furukawa, Erika ; Yamazaki, Yoshiki ; Kojima, Kazunobu ; Chichibu, Shigefusa
Author_Institution :
Nanomater. & Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
Abstract :
The lattice polarity dependent tolerance of displacement damage was studied for GaN by irradiating its +c and -c surfaces with a proton beam of 8 MeV. In agreement with the in-situ monitored increase of electrical resistance during irradiation, post-irradiation analysis by positron annihilation measurement revealed that the +c surface had a higher tolerance compared with that of the -c one. These results indicate that the defect introduction rate depends on the incident axis of proton beams.
Keywords :
III-V semiconductors; gallium compounds; hardness; positron annihilation; proton effects; surface resistance; wide band gap semiconductors; +c surfaces; -c surfaces; GaN; defect introduction rate; displacement damage; electrical resistance; electron volt energy 8 MeV; incident axis; lattice polarity dependent tolerance; polarity dependent radiation hardness; positron annihilation measurement; post-irradiation analysis; proton beam; Gallium nitride; Particle beams; Positrons; Protons; Radiation effects; Scattering parameters; Surface resistance; +c and −c surfaces of GaN; 8 MeV proton beam; positron annihilation; radiation hardness;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158544
