Polarity dependent radiation hardness of GaN

Author

Matsuo, Masayuki ; Murayama, Takayuki ; Koike, Kazuto ; Sasa, Shigehiko ; Yano, Mitsuaki ; Gonda, Shun-ichi ; Uedono, Akira ; Ishigami, Ryoya ; Kume, Kyo ; Ohtomo, Tomomi ; Furukawa, Erika ; Yamazaki, Yoshiki ; Kojima, Kazunobu ; Chichibu, Shigefusa

Author_Institution

Nanomater. & Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

50

Lastpage

51

Abstract

The lattice polarity dependent tolerance of displacement damage was studied for GaN by irradiating its +c and -c surfaces with a proton beam of 8 MeV. In agreement with the in-situ monitored increase of electrical resistance during irradiation, post-irradiation analysis by positron annihilation measurement revealed that the +c surface had a higher tolerance compared with that of the -c one. These results indicate that the defect introduction rate depends on the incident axis of proton beams.

Keywords

III-V semiconductors; gallium compounds; hardness; positron annihilation; proton effects; surface resistance; wide band gap semiconductors; +c surfaces; -c surfaces; GaN; defect introduction rate; displacement damage; electrical resistance; electron volt energy 8 MeV; incident axis; lattice polarity dependent tolerance; polarity dependent radiation hardness; positron annihilation measurement; post-irradiation analysis; proton beam; Gallium nitride; Particle beams; Positrons; Protons; Radiation effects; Scattering parameters; Surface resistance; +c and −c surfaces of GaN; 8 MeV proton beam; positron annihilation; radiation hardness;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158544

Filename

7158544