DocumentCode
722802
Title
High drain current and low on-resistance in AlGaN/GaN HEMTs with Au-plated ohmic electrodes
Author
Suzuki, Y. ; Tone, K. ; Asubar, J.T. ; Tokuda, H. ; Kuzuhara, M.
Author_Institution
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
fYear
2015
fDate
4-5 June 2015
Firstpage
52
Lastpage
53
Abstract
This paper describes the effect of thickening Au-plated ohmic electrodes in AlGaN/GaN HEMTs on the drain current and on-resistance. By increasing the thickness of Au-plated ohmic electrodes up to 5 μm, the fabricated AlGaN/GaN HEMT with a total gate width from 2 to 10 mm exhibited an increase in the maximum drain current by about 50 % and a reduction in the on-resistance by more than 40 %.
Keywords
III-V semiconductors; aluminium compounds; electrochemical electrodes; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT; Au; Au-plated ohmic electrodes; high drain current; low on-resistance; thickening effect; Aluminum gallium nitride; Electrodes; Gallium nitride; HEMTs; Logic gates; MODFETs; Wide band gap semiconductors; AlGaN/GaN; Au-Plating; HEMT; On-resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location
Kyoto
Print_ISBN
978-1-4799-8614-9
Type
conf
DOI
10.1109/IMFEDK.2015.7158545
Filename
7158545
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