DocumentCode
722807
Title
Fabrication and characterization of Si-based bipolar transistor structures using low-temperature bonding
Author
Shimizu, S. ; Nishida, S. ; Liang, J. ; Morimoto, M. ; Shigekawa, N.
Author_Institution
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
fYear
2015
fDate
4-5 June 2015
Firstpage
64
Lastpage
65
Abstract
We applied the low-temperature bounding for fabricating base/collector junctions of Si-based bipolar transistor structures. The common-base current gain of fabricated bipolar transistors increased as the ambient temperature was raised up to 165°C, which suggests that the low-temperature bounding might be useful for fabricating high-performance heterojunction devices.
Keywords
bipolar transistors; bonding processes; elemental semiconductors; silicon; Si; Si-based bipolar transistor structures; base-collector junctions; common-base current gain; low-temperature bonding; Bipolar transistors; Bonding; Heterojunctions; Resistance; Silicon; Temperature; Temperature measurement; Si bipolar transistors; common-base characteristics; low temperature bounding; surface-activated bounding;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location
Kyoto
Print_ISBN
978-1-4799-8614-9
Type
conf
DOI
10.1109/IMFEDK.2015.7158551
Filename
7158551
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