Title :
Evaluation of the extraction method of mobility in InGaAs n-MOSFETs
Author :
Matsuda, Akihiro ; Hiroki, Akira ; Goto, Yuta
Author_Institution :
Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
In this paper, we evaluate the extraction method of the inversion layer mobility using a drain current analysis model. The model parameters have been extracted from the measured value of the current characteristics of a high mobility InGaAs n-MOSFET. The analysis model has the gate voltage dependence of the channel length modulation coefficient. It is found that the mobility shows within 10 percent accuracy in the range more than 0.8 V. As a result, it is found that this method has a sufficient accuracy for high mobility InGaAs n-MOSFETs.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; inversion layers; semiconductor device models; InGaAs; InGaAs n-MOSFET; channel length modulation coefficient; drain current analysis; extraction method; gate voltage dependence; inversion layer mobility; Accuracy; Analytical models; Charge carrier density; Indium gallium arsenide; Logic gates; MOSFET circuits; Voltage measurement; InGaAs n-MOSFETs; extraction method; inversion layer mobility;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158555
