DocumentCode
722813
Title
Hall effect in a p-type poly-Si thin-film transistor with Hall terminals
Author
Shiga, Haruki ; Yoshikawa, Akito ; Matsumoto, Takaaki ; Miyamura, Shogo ; Matsuda, Tokiyoshi ; Kimura, Mutsumi ; Ozawa, Tokuro ; Aoki, Koji ; Chih-Che Kuo
Author_Institution
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
fYear
2015
fDate
4-5 June 2015
Firstpage
78
Lastpage
79
Abstract
We fabricated a p-type poly-Si thin-film transistor with Hall terminals and evaluated the Hall voltage by applying gate voltage, drain voltage, and magnetic field. We found that the Hall voltage is dependent on the magnetic field when the gate voltage is beyond a threshold voltage.
Keywords
Hall effect; elemental semiconductors; magnetic fields; silicon; thin film transistors; Hall effect; Hall terminals; Hall voltage; Si; drain voltage; gate voltage; magnetic field; p-type poly-Si thin film transistor; Films; Logic gates; Magnetic fields; Magnetic sensors; Thin film transistors; Threshold voltage; Hall effect; Hall terminal; p-type; poly-Si; thin-film transistor (TFT);
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location
Kyoto
Print_ISBN
978-1-4799-8614-9
Type
conf
DOI
10.1109/IMFEDK.2015.7158558
Filename
7158558
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