Title :
Characteristic analysis of thin-film phototransistors
Author :
Haruki, Shota ; Fuchiya, Takahiro ; Kadonome, Takayuki ; Tanaka, Takumi ; Matsuda, Tokiyoshi ; Kimura, Mutsumi
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
We have evaluated characteristic deviation and characteristic degradation of poly-Si thin-film phototransistors. We found that the characteristic deviation is not negligible, which seems due to energy distribution of excimer-laser crystallization, and must be compensated for some applications. We found that the characteristic degradation is negligible, which is convenient for abovementioned applications.
Keywords :
elemental semiconductors; excimer lasers; phototransistors; silicon; thin film transistors; Si; characteristic analysis; characteristic degradation; characteristic deviation; energy distribution; excimer laser crystallization; poly-Si thin film phototransistors; Crystallization; Degradation; Films; Phototransistors; Retina; Silicon; Thin film transistors; characteristic analysis; thin-film phototransistors (TFPT);
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158559
