Title :
Neuron MOS inverter and source follower using thin-film transistors
Author :
Nakamura, Nao ; Shimada, Kenji ; Matsuda, Tokiyoshi ; Kimura, Mutsumi
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
We have developed neuron MOS devices using TFTs. We fabricated and evaluated neuron MOS inverter, which can be also utilized as a variable threshold voltage inverter, and neuron MOS source follower, which can be also utilized as a digital-analog converter. The neuron MOS devices indicate that TFTs have great potential for application to artificial neural networks.
Keywords :
MOSFET; digital-analogue conversion; invertors; neural nets; thin film transistors; artificial neural networks; digital-analog converter; neuron MOS inverter; neuron MOS source follower; thin-film transistors; variable threshold voltage inverter; Films; Inverters; Logic gates; MOS devices; Neurons; Thin film transistors; Threshold voltage; inverter; neuron MOS; source follower; thin-film transistor (TFT);
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158564
