Title :
Evaluation of In2O3 thin film deposited by RF magnetron sputtering
Author :
Yoshioka, Toshihiro ; Ogawa, Junji ; Yuge, Masahiro ; Matsuda, Tokiyoshi ; Kimura, Mutsumi
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
Transparent In2O3 thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using In2O3 powder target. The transmittance of the In2O3 film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the In2O3 thin film would be applicable for the active layer of transparent TFT.
Keywords :
electric resistance; indium compounds; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; thin film transistors; transparency; In2O3; RF magnetron sputtering; powder target; sheet resistance; thin film deposition; thin film transistor active channel layer; transmittance; transparent In2O3 thin film semiconductor; Magnetic films; Magnetic semiconductors; Powders; Radio frequency; Sputtering; Thin film transistors; Oxide semiconductor; sheet resistance; transmittance; transparent TFT;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158565
