Evaluation of In2O3 thin film deposited by RF magnetron sputtering

Author

Yoshioka, Toshihiro ; Ogawa, Junji ; Yuge, Masahiro ; Matsuda, Tokiyoshi ; Kimura, Mutsumi

Author_Institution

Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

92

Lastpage

93

Abstract

Transparent In₂O₃ thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using In₂O₃ powder target. The transmittance of the In₂O₃ film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the In₂O₃ thin film would be applicable for the active layer of transparent TFT.

Keywords

electric resistance; indium compounds; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; thin film transistors; transparency; In₂O₃; RF magnetron sputtering; powder target; sheet resistance; thin film deposition; thin film transistor active channel layer; transmittance; transparent In₂O₃ thin film semiconductor; Magnetic films; Magnetic semiconductors; Powders; Radio frequency; Sputtering; Thin film transistors; Oxide semiconductor; sheet resistance; transmittance; transparent TFT;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158565

Filename

7158565