Title :
A simulation study on soft error rate in STT-MRAM
Author :
Wakimura, Go ; Matsuoka, Toshimasa ; Kamakura, Yoshinari
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
Using a three-dimensional device simulator, we evaluate the single event upset probability of spin-transfer torque magnetic random access memory (STT-MRAM) supposing various radiation conditions such as linear energy transfer and incident direction. It is shown that STT-MRAM has enough tolerance for the radiation on the ground considering typical MTJ parameters for the present MRAM technology.
Keywords :
MRAM devices; radiation hardening (electronics); STT-MRAM; magnetic tunnel junctions; single event upset probability; soft error rate; spin-transfer torque magnetic random access memory; three-dimensional device simulator; typical MTJ parameters; Integrated circuit modeling; Magnetic tunneling; Simulation; Single event upsets; Switches; Torque; Transient analysis; Device Simulation; MTJ; STT-MRAM; Single Event Upset;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158571
