Title :
Temperature dependence of magnetoresistance characteristics of the on-state of resistive random access memory with ferromagnetic electrode
Author :
Ito, Daisuke ; Hamada, Yoshihumi ; Otsuka, Shintaro ; Shimizu, Tomohiro ; Shingubara, Shoso
Author_Institution :
Grad. Sch. of Sci. & Eng., Kansai Univ., Suita, Japan
Abstract :
Study of temperature dependence of magnetoresistance and I-V characteristics for the resistive random access memory with ferromagnetic electrode was carried out. The device exhibited bipolar operation mode. From temperature dependence of magnetoresistance of on-state, it is suggested that a very fine ferromagnetic conductive filament is formed.
Keywords :
electrochemical electrodes; magnetoresistance; resistive RAM; I-V characteristics; bipolar operation mode; ferromagnetic conductive filament; ferromagnetic electrode; magnetoresistance characteristics; resistive random access memory; temperature dependence; Electrodes; Hafnium compounds; Magnetoresistance; Nickel; Resistance; Temperature dependence; Temperature measurement; HfOx; Magnetoresistance; ReRAM;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158579
