• DocumentCode
    72284
  • Title

    A 0.8/2.4 GHz Tunable Active Band Pass Filter in InP/Si BiCMOS Technology

  • Author

    Zhiwei Xu ; McArdle-Moore, Julia ; Oh, Thomas C. ; Kim, Sungho ; Chen, Steven T. W. ; Royter, Yakov ; Lau, Mogens ; Valles, Irma ; Hitko, Donald A. ; Li, James C.

  • Author_Institution
    HRL Labs., LLC, Malibu, CA, USA
  • Volume
    24
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    47
  • Lastpage
    49
  • Abstract
    A tunable active band pass filter (BPF) has been designed in a chip-scale heterogeneous integration technology, which intimately integrates InP HBTs on a deep scaled CMOS technology. The BPF test chip consists of a programmable gain amplifier (PGA), a BPF core, and a buffer. The chip features a frequency tuning range from 0.8 to 2.4 GHz with 150 MHz pass band and four gain steps: 0, 6, 12, and 16 dB. The BPF core employs active-RC architecture for high linearity by leveraging the >300 GHz fT of InP HBTs and the programmability of CMOS. The test chip occupies 1.7×1.25 mm2 area including pads and draws 85/110 mA from a 3.5 V power supply for 0.8/2.4 GHz bands, respectively. In addition, it demonstrates out-of-band IIP3s of 21.97/16.87 dBm for 0.8/2.4 GHz bands at the high gain mode, which suggests the BPF core delivers 37.97/32.87 dBm out-of-band IIP3s.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; III-V semiconductors; active filters; band-pass filters; elemental semiconductors; heterojunction bipolar transistors; indium compounds; microwave filters; microwave integrated circuits; silicon; wafer-scale integration; BiCMOS technology; InP HBT; InP-Si; PGA; active RC architecture; bandwidth 150 MHz; chip scale heterogeneous integration technology; deep scaled CMOS technology; frequency 0.8 GHz to 2.4 GHz; gain 12 dB; gain 16 dB; gain 6 dB; programmable gain amplifier; tunable active BPF; tunable active band pass filter; Band-pass filters; CMOS integrated circuits; Gain; Indium phosphide; Linearity; Semiconductor device measurement; Silicon; Band pass filter (BPF); BiCMOS integrated circuit; Indium Phosphide (InP); heterojunction bipolar transistor (HBT); wafer scale integration;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2013.2287236
  • Filename
    6649992