DocumentCode :
723046
Title :
A study on the contact technology of nanomaterial and characterization of the ohmic contact layer in Cds-Al junction
Author :
Mishra, Sambeet ; Panigrahi, C.K. ; Dash, Ritesh
Author_Institution :
Dept. of Electr. Power Eng., Tallinn Univ. of Technol., Tallinn, Estonia
fYear :
2015
fDate :
19-20 March 2015
Firstpage :
1
Lastpage :
7
Abstract :
Incorporating the understanding of contact technology, its related problems and the possible solutions is utmost necessary in this era in order to achieve results which will ultimately show better device performance. The contact layer electrically couples metal layer with semiconductor layer and forms a semiconducting contact having low specific contact resistance. The fact that ohmic contact plays a major role in the performances of the devices cannot be overlooked; and owing to good ohmic contacts the efficiency and cost-effectiveness of devices gets improved. There are a lot of possible uses of the ohmic contacts in a variety of devices; one such is in the solar cells. Like ohmic contact, another thing that needs attention is the deposition method. A large number of experiments are being conducted on the blessed substance, Cadmium Sulphide, owing to the numerous advantages those are accompanied with the substance. Such an attempt was taken and the rigorous experiment was successfully conducted. The observation data were taken and the calculation was done. The values of bulk resistivity, number of charge carriers, contact resistivity, transfer length, sheet resistivity, contact resistance, electron affinity, and barrier height were found out. Upon completion, the desirable result was obtained and graph was plotted and all the processes were described.
Keywords :
II-VI semiconductors; aluminium; cadmium compounds; contact resistance; electrical resistivity; electron affinity; ohmic contacts; semiconductor-metal boundaries; solar cells; vacuum deposition; wide band gap semiconductors; CdS-Al; barrier height; bulk resistivity; charge carriers; contact resistance; contact resistivity; contact technology; deposition method; electron affinity; metal-semiconductor junction; nanomaterial; ohmic contact layer; sheet resistivity; solar cells; transfer length; Conductivity; Copper; Ohmic contacts; Resistance; Strips; Substrates; CdS Solar Cell; Deposition methods; Ohmic contact; TLM; metal semiconductor (CdS-Al) junction; nanomaterial; photosensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuit, Power and Computing Technologies (ICCPCT), 2015 International Conference on
Conference_Location :
Nagercoil
Type :
conf
DOI :
10.1109/ICCPCT.2015.7159477
Filename :
7159477
Link To Document :
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