DocumentCode
723068
Title
A novel TSV inductor structure for RF applications
Author
Kim, Bruce ; Mondal, Saikat ; Sang-Bock Cho ; Gamboa, Jonathan
Author_Institution
Dept. of Electr. Eng., City Univ. of New York, New York, NY, USA
fYear
2015
fDate
26-29 May 2015
Firstpage
236
Lastpage
239
Abstract
In this paper, we present a positional analysis of a reference ground plane for Through-Silicon-Via (TSV)-based inductor implementation. A new inductor structure is proposed which uses fewer ground planes while still achieving the same functionality. Results were derived from a 3D full wave simulation performed up to 20 GHz.
Keywords
inductors; microwave integrated circuits; three-dimensional integrated circuits; 3D full wave simulation; RF applications; TSV inductor structure; frequency 20 GHz; positional analysis; reference ground plane; through-silicon-via; Couplings; Inductance; Inductors; Q-factor; Silicon; Substrates; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/ECTC.2015.7159598
Filename
7159598
Link To Document