DocumentCode :
723152
Title :
Degradation of Cu-Al wire bonded contacts under high current and high temperature conditions using in-situ resistance monitoring
Author :
Rongen, Rene ; van IJzerloo, Arjan ; Mavinkurve, Amar ; O´Halloran, G.M.
Author_Institution :
NXP Semicond., Nijmegen, Netherlands
fYear :
2015
fDate :
26-29 May 2015
Firstpage :
1396
Lastpage :
1402
Abstract :
To evaluate the dynamics of Cu-Al bond contact degradation, the evolution of the intermetallic electrical interface resistance was monitored in-situ in a test device exposed to high temperatures (140 to 200°C) while conducting high current densities (7.0 × 103 to 4.5 × 104 A/cm2). The degradation is quite different from what is known for Au-Al contacts. The influence of different stimuli like current direction, current density, temperature, and temperature gradients is studied and discussed. On top of that the dynamics in relation to material properties is assessed in detail from which the concept of an incubation time until IMC degradation starts is proposed.
Keywords :
aluminium alloys; copper alloys; current density; electric resistance; electrical contacts; gold alloys; lead bonding; Au-Al; Cu-Al; IMC degradation; current density; current direction; high current condition; high temperature condition; in-situ resistance monitoring; intermetallic compound; intermetallic electrical interface resistance; material property; temperature 140 C to 200 C; temperature gradient; wire bonded contact degradation; Corrosion; Degradation; Resistance; Stress; Temperature measurement; Temperature sensors; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/ECTC.2015.7159780
Filename :
7159780
Link To Document :
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