Investigation of thermo-mechanical stresses and reliability of 3D die-stack structures by synchrotron x-ray micro-diffraction

Author

Tengfei Jiang ; Peng Su ; Kim, Patrick ; Bassett, Cassie ; Sichak, Kevin ; Gandhi, Jaspreet ; Jian Li ; Im, Jay ; Rui Huang ; Ho, Paul S.

Author_Institution

Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA

fYear

2015

fDate

26-29 May 2015

Firstpage

1718

Lastpage

1724

Abstract

In this work, thermo-mechanical stresses and reliability of 3D die-stack structures developed for the Hybrid Memory Cube (HMC) technology are investigated using experiments and modeling analysis. Synchrotron x-ray micro-diffraction measurements are used to directly measure the stress distribution around Cu vias in different die levels. High resolution stress mappings are obtained and verified by finite element analysis (FEA). The FEA is applied to estimate the stress effect on device mobility changes and the warpage of the integrated structure.

Keywords

copper; finite element analysis; integrated circuit reliability; stacking; stress effects; synchrotrons; thermomechanical treatment; three-dimensional integrated circuits; 3D die-stack structures; Cu; FEA; HMC technology; device mobility; finite element analysis; high resolution stress mappings; hybrid memory cube technology; integrated structure; modeling analysis; reliability; stress effect; synchrotron X-Ray microdiffraction measurements; thermomechanical stresses; Random access memory; Reliability; Strain; Stress; Stress measurement; Three-dimensional displays; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/ECTC.2015.7159829

Filename

7159829