• DocumentCode
    723204
  • Title

    Dependency of the porosity and the layer thickness on the reliability of Ag sintered joints during active power cycling

  • Author

    Weber, Constanze ; Hutter, Matthias ; Schmitz, Stefan ; Lang, Klaus-Dieter

  • Author_Institution
    Fraunhofer IZM, Berlin, Germany
  • fYear
    2015
  • fDate
    26-29 May 2015
  • Firstpage
    1866
  • Lastpage
    1873
  • Abstract
    In order to analyze the reliability of Ag sintered joints in dependency of their porosity and their layer thickness, Si IGBTs were mounted on DCB substrates via Ag sintering by applying a certain pressure as well as conducting pressure-less sintering. The assemblies were subjected to active power cycling tests at which the electric current was controled such that the die attach was exposed to temperatures from +30 °C up to +180 °C. The results show that depending on the applied pressure and the initial layer thickness Ag sintered joints exhibit a 10 to 100 times higher lifetime than standard SnAg3.5 solder joints. Furthermore, the analyses of cross sections show that the occurring failures of the thermomechanically treated Ag sintered joints are deviating from those of soldered joints which fail due to creep fatigue solely. It is also shown that the occurring failures can be detected non-destructively by combining X-ray and ultrasonic-microscopy.
  • Keywords
    X-ray analysis; acoustic microscopy; creep; insulated gate bipolar transistors; microassembling; nondestructive testing; porosity; reliability; silicon; silver; silver alloys; sintering; solders; thermomechanical treatment; tin alloys; Ag; DCB substrate; X-ray; active power cycling test; creep fatigue; die attach; electric current controled; insulated gate bipolar transistor; layer thickness; nondestructively detection; porosity; pressure-less sintering; silicon IGBT; silver sintered joint reliability; temperature 30 C to 180 C; thermomechanical treatment; ultrasonic-microscopy; Current; Joints; Microassembly; Reliability; Scanning electron microscopy; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/ECTC.2015.7159854
  • Filename
    7159854