DocumentCode
723213
Title
Noise coupling emulation between TSV and active circuit through metal oxide patch
Author
Manho Lee ; Jonghyun Cho ; Jaemin Lim ; Joungho Kim
Author_Institution
Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear
2015
fDate
26-29 May 2015
Firstpage
1945
Lastpage
1949
Abstract
In this paper, we measure the noise coupling of metal oxide patch and propose the emulation process for the noise coupling between TSV and active circuit by substituting TSV to metal oxide patch. For that, we utilize the analysis of noise coupling of TSV by dividing frequency range. With this results, the system designer can anticipate the effect of noise coupling between TSV and active circuit without fabricating TSV-included active circuit.
Keywords
active networks; integrated circuit manufacture; integrated circuit noise; three-dimensional integrated circuits; TSV; active circuit; metal oxide patch; noise coupling emulation; through-silicon-via; Active circuits; Couplings; Metals; Noise; Noise measurement; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/ECTC.2015.7159867
Filename
7159867
Link To Document