Theoretical Study of Metal-Insulator-Metal Tunneling Diode Figures of Merit

Author

Hashem, Islam E. ; Rafat, Nadia H. ; Soliman, Ezzeldin A.

Author_Institution

Dept. of Eng. Math. & Phys., Univ. of Cairo, Giza, Egypt

Volume

49

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

72

Lastpage

79

Abstract

The performance of metal-insulator-metal (MIM) diodes is investigated. In this paper, we derive an analytical model that uses the Transfer Matrix Method based on the Airy Functions (AF-TMM) for the tunneling transmission probability through any number of insulating layers. The fast-computing AF-TMM simulator results show a complete matching with the numerical Non-Equilibrium Green´s Function and a reasonable matching with previously published experimental results. This study shows the effect of the work function difference and insulator thickness on MIM diode performance. The advantage of using two insulator layers on enhancing the diode responsivity, resistance, and nonlinearity is also investigated.

Keywords

Green´s function methods; MIM devices; matrix algebra; tunnel diodes; MIM diodes; airy functions; complete matching; figures of merit; insulating layers; metal-insulator-metal tunneling diode; nonrquilibrium Green´s function; transfer matrix method; tunneling transmission probability; Equations; Insulators; Mathematical model; Niobium; Tunneling; Wave functions; Airy function; metal-insulator-metal (MIM) diode; rectenna; tunneling current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2012.2228166

Filename

6357206