DocumentCode :
72342
Title :
Theoretical Study of Metal-Insulator-Metal Tunneling Diode Figures of Merit
Author :
Hashem, Islam E. ; Rafat, Nadia H. ; Soliman, Ezzeldin A.
Author_Institution :
Dept. of Eng. Math. & Phys., Univ. of Cairo, Giza, Egypt
Volume :
49
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
72
Lastpage :
79
Abstract :
The performance of metal-insulator-metal (MIM) diodes is investigated. In this paper, we derive an analytical model that uses the Transfer Matrix Method based on the Airy Functions (AF-TMM) for the tunneling transmission probability through any number of insulating layers. The fast-computing AF-TMM simulator results show a complete matching with the numerical Non-Equilibrium Green´s Function and a reasonable matching with previously published experimental results. This study shows the effect of the work function difference and insulator thickness on MIM diode performance. The advantage of using two insulator layers on enhancing the diode responsivity, resistance, and nonlinearity is also investigated.
Keywords :
Green´s function methods; MIM devices; matrix algebra; tunnel diodes; MIM diodes; airy functions; complete matching; figures of merit; insulating layers; metal-insulator-metal tunneling diode; nonrquilibrium Green´s function; transfer matrix method; tunneling transmission probability; Equations; Insulators; Mathematical model; Niobium; Tunneling; Wave functions; Airy function; metal-insulator-metal (MIM) diode; rectenna; tunneling current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2012.2228166
Filename :
6357206
Link To Document :
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