DocumentCode :
723526
Title :
CMOS compatible pinpointed fabrication of nanoscale silicon oxide islands array
Author :
Pengfei Dai ; Na Lu ; Anran Gao ; Yuelin Wang ; Tie Li
Author_Institution :
Sci. & Technol. on Microsyst. Lab., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fYear :
2015
fDate :
27-30 April 2015
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, a novel method is introduced to fabricate nanoscale silicon oxide islands array. Rectangle islands patterns with edge length less than 100 nm are fabricated by traditional contact lithography and buffered oxide etching process. Precise sacrificial layer etching technique is used to control the size of islands from micro-scale to nanoscale accurately. This fabrication method is CMOS compatible and can realize mass production of nanoscale patterns array in very low cost.
Keywords :
CMOS integrated circuits; nanofabrication; nanolithography; nanopatterning; silicon compounds; sputter etching; CMOS compatible pinpointed fabrication; SiO2; buffered oxide etching process; contact lithography; nanoscale patterns array; nanoscale silicon oxide islands array; rectangle islands patterns; sacrificial layer etching; CMOS integrated circuits; Fabrication; Liquids; Polymers; Resists; Shape; Silicon; CMOS Compatible; fabrication; island array; low cost; nanoscale;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2015 Symposium on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-8627-9
Type :
conf
DOI :
10.1109/DTIP.2015.7160980
Filename :
7160980
Link To Document :
بازگشت