Full-wave electromagnetic modeling of sub-millimeter wave HEMT parasitics

Author

Karisan, Yasir ; Caglayan, Cosan ; Trichopoulos, Georgios C. ; Sertel, Kubilay

Author_Institution

ElectroScience Lab., Ohio State Univ., Columbus, OH, USA

fYear

2015

fDate

22-22 May 2015

Firstpage

1

Lastpage

2

Abstract

We present a new distributed parasitic equivalent circuit model to accurately reproduce the frequency response of electromagnetic field couplings within the structure of submillimeter-wave high electron mobility transistors in the millimeter-wave and terahertz bands. To construct the proposed circuit model, we develop a multi-step parameter extraction algorithm, and demonstrate its accuracy through comprehensive comparisons between full-wave simulated, measured and modeled frequency responses of the presented test patterns up to 750 GHz.

Keywords

electromagnetic field theory; equivalent circuits; frequency response; high electron mobility transistors; semiconductor device models; submillimetre wave transistors; distributed parasitic equivalent circuit; electromagnetic field couplings; frequency response; full-wave electromagnetic modeling; multistep parameter extraction; submillimeter wave HEMT parasitics; submillimeter-wave high electron mobility transistors; Accuracy; Computational modeling; Electrodes; Equivalent circuits; Frequency measurement; HEMTs; Integrated circuit modeling; HEMT; distributed parasitic equivalent circuit model; electromagnetic coupling; parameter extraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Measurement Conference (ARFTG), 2015 85th

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/ARFTG.2015.7162904

Filename

7162904