DocumentCode :
724569
Title :
Full-wave electromagnetic modeling of sub-millimeter wave HEMT parasitics
Author :
Karisan, Yasir ; Caglayan, Cosan ; Trichopoulos, Georgios C. ; Sertel, Kubilay
Author_Institution :
ElectroScience Lab., Ohio State Univ., Columbus, OH, USA
fYear :
2015
fDate :
22-22 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We present a new distributed parasitic equivalent circuit model to accurately reproduce the frequency response of electromagnetic field couplings within the structure of submillimeter-wave high electron mobility transistors in the millimeter-wave and terahertz bands. To construct the proposed circuit model, we develop a multi-step parameter extraction algorithm, and demonstrate its accuracy through comprehensive comparisons between full-wave simulated, measured and modeled frequency responses of the presented test patterns up to 750 GHz.
Keywords :
electromagnetic field theory; equivalent circuits; frequency response; high electron mobility transistors; semiconductor device models; submillimetre wave transistors; distributed parasitic equivalent circuit; electromagnetic field couplings; frequency response; full-wave electromagnetic modeling; multistep parameter extraction; submillimeter wave HEMT parasitics; submillimeter-wave high electron mobility transistors; Accuracy; Computational modeling; Electrodes; Equivalent circuits; Frequency measurement; HEMTs; Integrated circuit modeling; HEMT; distributed parasitic equivalent circuit model; electromagnetic coupling; parameter extraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurement Conference (ARFTG), 2015 85th
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/ARFTG.2015.7162904
Filename :
7162904
Link To Document :
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