Transient temperature measurement of microwave devices

Decreased feature sizes with today´s advanced microwave devices has led to increased functionality and decreasing chip sizes. Not only higher power density but also localized hotspots have become a significant concern for transistor performance and long term reliability. Arrhenius´s law in chemical reaction dominates the reliability of highly doped semiconductors designed for higher switching speeds. With higher integration, the device features are significantly small such as a 100 nm line width line for a transistor gate electrode. As the dimensions decrease, the thermal time constant decreases simultaneously. Hence, it is major challenge to detect and measure hotspot temperatures.